THIN-FILM POLYCRYSTALLINE FIELD-EFFECT TRIODE.
Abstract
Post-fabrication thermal processing was studied during this quarter. Thermal processing of a small number of experimental units showed that greatly improved gate insulator stability could be achieved. Problems of device yield and the dependence of achievable stability on the fabrication parameter of the device were recognized. A program was initiated to fabricate a large number of samples for testing purposes. A new TFT fabrication facility was put into operation to augment the present facility. Devices were fabricated and tested for the beginning of a life testing program of thermally processed units. Stability investigation on experimental TFT's were continued. Standard device stability testing of drain current variations with time was continued on recently fabricated units. Additional testing pertinent to device stability was initiated. These included gate capacitance measurements and gate impedance measurements. These tests were accomplished on unprocessed units. The work on photoemission into thin-film insulators has been used to study the energy band diagram of metal-insulator and semiconductor-insulator contacts. We have studied A12O3, SiO, SiO2, and CaF2 in contact with Al, Au, and CdSe electrodes. The work on SiO and SiO2 is a continuation of last quarter's work and the results have been consistent with what has been previously reported. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1966
- Accession Number
- AD0639433
Entities
People
- J. J. Bowe
- J. J. Fabula
- M. L. Topfer
- R. L. Schelhorn
- W. H. Laznovsky