PRODUCTION ENGINEERING MEASURE FOR THE PRODUCTION OF SILICON MONOXIDE CAPACITORS MICROELEMENT.
Abstract
A pilot production process for fabricating SiO microelement capacitors at a rate of 2,000 per eight-hour shift was demonstrated and the products therefrom tested and shown to pass the required specifications. Each microelement (0.310 in. square) contains 1, 2, 3, or 4 capacitors with values of 1120 and 560, 180, 100, and 68 pf per capacitor, respectively. In addition to the general requirements of microelements and micromodules, some of the more important specifications are: dissipation factor (DF) < or = 1.5%, dielectric withstanding voltage = 150 volts, insulation resistance (IR) > 1000 megohms at 50 volts and 25 C and > 75 megohms at 125 C, Delta C/C < or = 15% (-55 to +125 C), and a long term life test of 2000 hours at 125 C and 100 volts after which DF < or = 3% and IR (25 C) > 200 megohms for 560 pf and > 750 megohms for 180, 100 and 68 pf units and IR (125 C) > 20 megohms for 500 pf and > 50 megohms for other capacitance values. The capacitors are vacuum deposited in a multi-station jig using as heated evaporation sources. The alumina ceramic substrates were metalized with Au-Pt at the peripheral terminations and the interior area was glazed, using a fritted-glass tape. The aluminum electrodes are about 5000 A thick and the SiO dielectric is about 16,000 A thick. Deposition rates are about 50 A/sec. Rates and film thicknesses are monitored and controlled. Vacuum chamber pressure is 1 to 4 x 10 to the minus 5th power torr. Substrate temperature is 170 C during depositions. Yields of about 90% were achieved. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 29, 1966
- Accession Number
- AD0639588
Entities
People
- Welville B. Nowak
Organizations
- Cornell Dubilier