ELECTRICAL CONDUCTIVITY AND WIDTH OF FORBIDDEN ZONE OF SOLID SOLUTIONS OF SEMICONDUCTOR COMPOUNDS OF INDIUM PHOSPHIDE AND GALLIUM ARSENIDE,

Abstract

A study was undertaken of the temperature dependence of the electrical conductivity of the alloys of the system InP-GaAs in the range of temperature of 170 to 750 C and a determination was made of the energy of activation or width of the forbidden zone in accordance the temperature change of the electrical conductivity in the area of natural conductivity.

Document Details

Document Type
Technical Report
Publication Date
Apr 25, 1966
Accession Number
AD0640303

Entities

People

  • L. A. Makovetskaya
  • N. N. Sirota

Organizations

  • National Air and Space Intelligence Center

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Alloys
  • Chemical Compounds
  • Climate Change
  • Compound Semiconductors
  • Conductivity
  • Electrical Conductivity
  • Electronics
  • Gallium
  • Gallium Arsenides
  • Metallic Compounds
  • Semiconductors
  • Solid Solutions
  • Solid State Electronics

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics