THERMODYNAMICS OF THE CHLORINE-HYDROGEN-SILICON SYSTEM.
Abstract
The equilibrium composition of the gas phase and the weight of silicon deposited were calculated for SiCl4/H2 and SiHCl3/H2 mixtures at temperatures ranging from 1000 - 2000K and a pressure of one atmosphere. It is shown that many observations made on the rate of epitaxial silicon deposition from SiCl4/H2 and SiHCl3/H2 mixtures may be explained in terms of thermodynamics alone. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 13, 1966
- Accession Number
- AD0641310
Entities
People
- M. J. Harper
- T. J. Lewis