INJECTION CAUSED P-N JUNCTION IN CDS.

Abstract

It is observed using the Franz-Keldysh effect that certain 'very pure' CdS crystals show a high field layer close to, but well separated from, a hole injecting anode (Au). This layer is identified as a p-n junction caused by hole injection. Inversion of a IR quenching spectrum into a similar IR excitation spectrum is observed at an applied voltage where this high field layer becomes 'visible', and explained as caused by a current controlling p-type region in CdS. (Author)

Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1966
Accession Number
AD0641400

Entities

People

  • J. J. Ward
  • Karl Wolfgang Boer

Organizations

  • University of Delaware

Tags

DTIC Thesaurus Topics

  • Diffraction
  • Electronic Equipment
  • Electronics
  • Excitation
  • Inversion
  • P-N Junctions
  • Quenching
  • Semiconductor Devices
  • Spectra

Fields of Study

  • Materials science

Readers

  • Plasma Physics.
  • Semiconductor Device Technology