PRODUCTION ENGINEERING MEASURE FOR INSULATED GATE FIELD EFFECT TRANSISTORS.
Abstract
The work centered mainly in four areas: two new photolithographic mask sets were devised to insure the necessary geometrical variations were investigated. These new sets will enable both epitaxial and nonepitaxial techniques to be more fully developed; stable processing steps were formulated with results shown on capacitance-voltage plots; advanced devices were fabricated using information obtained from the initial production group; reliability information was compiled and certain conclusions were drawn. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 31, 1966
- Accession Number
- AD0641401
Entities
People
- Dale Reinke
- Harry Forehand
- James K. George
- Myint Hswe
Organizations
- Motorola Mobility