NEW SOLID-STATE DEVICE CONCEPTS,
Abstract
The diffusion of Se in CdSe is found to be similar to that in CdS. Na diffuses rapidly in CdS, indicating an interstitial diffusion mechanism. Enhanced Na solubility in donor-doped material indicates, in addition, a substitutional form. In Cl-doped CdS it forms a rather stable NaCl complex 'molecule.' A method of measuring the diffusion profile of Cl using radioactive Na is indicated. Measurements show considerable overlap between the photoconductivity excitation bands in p- and n-type ZnSe(x)Te(1-x) and the electroluminescent emission band of the diodes, thus confirming the turn-on mechanism postulated earlier. Reduction of the contact resistance to the p-type side of the ZnSe(x)Te(1-x) diodes has made it possible to turn them on at 77K without an external light pulse. The electrochemical phenomena taking place during the oxidation of silicon are discussed. With thin-film GaAs diodes prepared under more carefully controlled evaporation conditions, it has been found that only films deposited on substrates between 350 and 450C have optical properties approaching those of bulk GaAs. An automatic mask changer and series of evaporation masks have been completed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1966
- Accession Number
- AD0641456
Entities
People
- H. H. Woodbury
- J. R. Richardson
- M. Aven
- R. B. Hall
- W. Garwacki
Organizations
- General Electric