INVESTIGATION AND DEVELOPMENT OF SEMICONDUCTOR-METAL CATHODES.
Abstract
With a view to the development of a semiconductor-metal cathode, investigations have been undertaken aimed at the production of Schottky barriers of height ms > or = 1.5 eV on semiconductor materials of controllable properties. A brief survey has been made of the characteristics of Schottky barriers on ZnO and B6P, and an intensive study of the GaAs(1-x)Px system has been begun. It has been established that etching with H2SO4-H2O-H2O2 (etch a0 prior to vacuum deposition of gold or aluminum dots results in barriers of consistent properties, and correlation with direct ellipsometric measurements of surface film thickness has been made. The etch A treatment reduces the film thickness from nearly equal to 30 A (after careful solvent cleaning) to nearly equal to 12 A, or close to the best values obtained to date on Si. Barrier heights up to approximately 1.3 eV have been obtained to date on etched GaAs (.60)P (.40). In an attempt to understand in detail the discrepancies between the barrier heights measured by means of capacitance vs voltage, current vs voltage, and photoemissive yield measurements, and to take possible experimental evaluation of true barrier height, a theoretical treatment of Schottky barriers is presented which includes explicitly the effects of the interfacial dielectric film. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1966
- Accession Number
- AD0641614
Entities
People
- Lawrence S. Lerner
- Robert J. Archer