OPTICAL STUDIES OF RADIATION DAMAGE PROCESSES.
Abstract
The program used the high dose rate available from an electron linear accelerator to study radiation damage and excitation-de-excitation processes on a fast time scale. Fast optical techniques were used to study the processes occurring, and apparatus and methods were developed for measuring optical absorption and emission at nanosecond speeds. Progress was also made towards the application of high-speed electron spin resonance to these problems. These techniques were applied to a study of de-excitation, from the energy deposited by an electron pulse in ruby and in GaAs, and also to the kinetics of radiation damage in GaAs. In the alkali halides, absorption techniques were used to study the introduction and annealing of F centers; and the trapping of radiation produced electrons to form F centers. Fast optical techniques proved to give an important increase in the understanding of these processes, and are also useful in understanding radiation-induced conductivity in insulators. Optical absorption and photoconductivity measurements were made to study the kinetics of complex defect center formation in silicon: this work is still in a preliminary stage. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 24, 1966
- Accession Number
- AD0641725
Entities
People
- D. M. J. Compton
Organizations
- General Dynamics