RADIATION EFFECTS ON (MONOLITHIC) MICROELECTRONIC CIRCUITS.
Abstract
Evaluation of commercial circuits reveals that the better constructed circuits are immune to transient radiation disturbances up to 110 to the 9th power rads (Si)/sec and to permanent damage up to at least 10 to the 13th power N sub (f)vt. Analysis shows that the transient effects originate in the junctions with the substrate. Theoretical expressions are derived for the critical radiation thresholds. On the basis of this analysis, guidelines are set down for the design of monolithic circuits resistant to transient radiation effects. Analysis shows that permanent damage is due to degradation of transistor current gain. Theoretical expressions are derived for the critical radiation thresholds for permanent damage. On the basis of this analysis, guidelines are set down for the design of radiation-hardened monolithic circuits. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1966
- Accession Number
- AD0642301
Entities
People
- A. M. Liebschutz
- C. W. Perkins
- R. W. Marshall
Organizations
- Hughes Aircraft Company