JUNCTION EFFECTS IN COMPOUND SEMICONDUCTORS,

Abstract

The effect of the considerable depth of donor impurity states near the indirect <100> conduction band minima on the direct-indirect transition in Ga(AsP) is discussed. A simple technique for using a Ga(AsP) laser to operate a CdSe laser is described. The current understanding of the p-'i'-n deep-level oscillator is mentioned. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1966
Accession Number
AD0642342

Entities

People

  • G. Stillman
  • J. S. Moore
  • M. D. Sirkis
  • M. R. Johnson
  • N. Holonyak

Organizations

  • University of Illinois Urbana–Champaign

Tags

DTIC Thesaurus Topics

  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Conduction Bands
  • Electronics
  • Energy Bands
  • Impurities
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Oscillators
  • Semiconductors
  • Silicon Carbide
  • Silicon Compounds
  • Solid State Electronics

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Lasers
  • Microelectronics