EFFECTS OF PRESSURE ON A SEMICONDUCTOR LASER RADIATION.
Abstract
The results of the relativistic APW calculation of the band structure, momentum matrix elements and deformation potentials of the lead salts are used to calculate the effects of constant pressure on lasers made of these materials. Behavior of the frequency, polarization and relative gain of these lasers are calculated for several dopings, and injection levels, when isotropic and uniaxial pressures are applied. The effect of small dynamic pressure on semiconductor lasers is analyzed, resulting in a frequency modulation of the laser radiation. An experiment confirming this analysis was performed. A 2 Mc/s frequency modulation was introduced into a cw GaAs injection laser with an ultrasonic wave. This modulation was then detected with the use of a Fabry-Perot interferometer. A theoretical analysis of the limitations of the method of modulation demonstrated above was carried out with a regard to its device applications. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 19, 1966
- Accession Number
- AD0642514
Entities
People
- Jose Ellis Ripper Filho
Organizations
- Massachusetts Institute of Technology