AN INTERFEROMETRIC EFFECT WITH SEMICONDUCTORS IN THE MILLIMETER WAVE REGION.
Abstract
Calculations and experiments have been carried out relating to multiple internal reflections of millimeter waves in semiconductors for a specific system composed of air, a semiconductor panel, an air gap, and a metal reflector. If the thickness of the semiconductor and air gap is chosen at critical values, and if the conductivity of germanium is chosen properly, it is found that complete absorption will result and no reflection occurs. Next in these types of systems, the semiconductor conductivity can be varied electronically, i.e., injection of excess free carriers by light, by electron bombardment, or by current being carried across a junction. Changes in conductivity result in variations in reflected power. The sensitivity of such a system opens up the possibility of a new family of devices for instruments for physical measurements and quasi-optical systems. Three examples of new devices are described as follows: (1) a device for amplitude modulation of millimeter and submillimeter waves; (2) an interferometer for measurement of wavelength in this region; (3) an approach for conversion of millimeter and submillimeter wave images into visual displays. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1966
- Accession Number
- AD0642573
Entities
People
- George Morris
- Harold Jacobs
- Ronald Hofer
Organizations
- United States Army Communications-Electronics Command