SILICON DIODE FAST NEUTRON DOSIMETER, PHASE III, REVERSE-RECOVERY LIFETIME AS A FUNCTION OF TEMPERATURE,
Abstract
P-i-n wide-base diodes were made from n- and p-type, float-zone silicon. The diodes were irradiated with fast neutrons and annealed at 58C, 100C, 150C, and 200C for 175 hours at each step. Reverse-recovery lifetime as a function of temperature was taken before and after irradiation and after each anneal. The temperature dependence of the lifetime indicated very shallow levels which are not in agreement with the existing literature. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1966
- Accession Number
- AD0642582
Entities
People
- J. M. Swartz
- M. O. Thurston
- W. H. Closser