UHF INTEGRATED CIRCUIT TECHNOLOGY.
Abstract
The report discusses the design of a silicon monolithic UHF integrated amplifier. A transistor having an f sub T of 3.3 GHz, intended for use in integrated circuits, has been designed and the y-parameters computed over a wide range of frequencies. Fabrication techniques to be used in the construction of the amplifier are summarized. A computer program has been prepared to obtain the y-parameters of the transistor, modified by the addition of an arbitrarily complex network including isolation capacitance, collector series resistance, biasing, RC coupling networks, etc. The computer program has been used to obtain the performance characteristics of a common-emitter, RC-coupled amplifier. A biasing scheme and possible layout of the circuit are given. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1966
- Accession Number
- AD0642593
Entities
People
- G. M. Purnaiya
- J. A. Archer