INTEGRATED SILICON DEVICE TECHNOLOGY. VOLUME XII. MEASUREMENT TECHNIQUES.
Abstract
Methods for determining the most common physical/electrical properties of silicon or devices made from silicon are described in this report. These measuring methods are grouped under four general headings: starting material evaluation, process parameter evaluation, device electrical evaluation, and device thermal evaluation. ASTM and other published standards are cited where applicable. For certain measurements these referenced standards are the only methods given; for others, alternative methods are also described in detail; and for still other measurements, no adequate standards exist. In the latter case the procedures given here have been developed from what seems to be common practice and sense. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1966
- Accession Number
- AD0643610
Entities
People
- B. M. Berry
Organizations
- RTI International