EFFECT OF A COPPER ADMIXTURE ON ELECTRICAL PROPERTIES OF INSB,
Abstract
Some results of electrical properties of p-InSb crystals, obtained by the diffusion of copper into n-type crystals, are given. A table is given of concentration values N and mobility U of current carrying samples at 78K before and after diffusion annealing. It is shown on the table that samples with electron concentrations of 2--4.10 to the 13th power/cu cm change the type of conductivity at a temperature of 260C, and in samples with electron concentrations of 8.10 to the 13th power/cu cm the change in conductivity type takes place at a temperature of 300C. It is pointed out that investigations have shown that annealing of samples in a vacuum and in an argon atmosphere gives the same result. Samples of p-type with a low concentration of holes and sufficiently high mobility can be obtained by the diffusion of copper into n-InSb. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 08, 1966
- Accession Number
- AD0643640
Entities
People
- A. D. Berkeliev
- D. N. Nasledov
- V. V. Galavanov
Organizations
- National Air and Space Intelligence Center