STUDY FOR GENERALIZED MODEL FOR SEMICONDUCTOR RADIATION RESPONSE PREDICTION.
Abstract
The saturation-inclusive bipolar transistor representation has been refined and written into a computer code to allow detailed comparison of analytical and experimental results. Electrical and radiation-induced saturated switching responses have been calculated from electrical parameter measurements. The agreement between calculated and experimental results is good. The lumped-model analysis of the monolithic circuit elements has been extended to the detailed qualitative characteristics of junction-isolated and dielectrically-isolated resistor and transistor elements. Comparison is made between the results of the lumped-model analysis and known solutions of the differential equation representation of the devices. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1966
- Accession Number
- AD0643652
Entities
People
- James P. Raymond
- Robert E. Johnson