ANNUAL REPORT ON SPUTTERING, NOVEMBER 1966.
Abstract
Relative sputtering yields were determined for variously oriented Ge surfaces above and below the annealing temperature. The yield for Ge(100) was found to be higher for an ordered surface than for a damaged surface. The opposite is true in the case of Ge(110) and no change was observed for Ge(111). Alloy targets were sputtered to determine the amount of sputtering required to reach equilibrium conditions, where material is removed in the same proportions as the bulk. This produces a target surface layer of altered composition. In alloys of 55% Cu and 45% Ni, and of 90% Ni and 10% Ti, it appears that an equivalent of 10-20 atomic layers must be removed before equilibrium conditions are reached at bombarding ion energies of 500-1000 eV. Simultaneous sputtering of two targets with widely different yields produces some puzzling results. Only a small number of atoms from the low yield target, when deposited on the high yield target, produce a surface covered with cones and this results in a sizeable reduction in sputtering yield. A quadrupole mass filter system for analysis of sputtered material has been assembled and tested. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 08, 1966
- Accession Number
- AD0643920
Entities
People
- G. K. Wehner
- G. S. Anderson
- G. V. Jorgenson