THE EFFECT OF ADSORPTION OF GASES AND VAPORS ON THE WORK FUNCTION OF SEMICONDUCTORS WITH THE STRUCTURE OF ZINC BLENDE,

Abstract

The work function of an electron from germanium (n-type), Gallium arsenide (n-type) and copper bromide was studied in oxygen, hydrogen, propylene and vapors of isopropyl alcohol at different temperatures. A connection was revealed between the n-type state of the surface of these semiconductors and their adsorption capability with respect to oxygen. (Author)

Document Details

Document Type
Technical Report
Publication Date
Sep 28, 1966
Accession Number
AD0643971

Entities

People

  • I. A. Kirovskaya
  • I. S. Sazonova
  • L. G. Maidanovskaya

Organizations

  • National Air and Space Intelligence Center

Tags

DTIC Thesaurus Topics

  • Adsorption
  • Chemical Compounds
  • Compound Semiconductors
  • Electronics
  • Electrons
  • Elements
  • Gallium
  • Gallium Arsenides
  • Germanium
  • Hydrogen
  • Propenes
  • Semiconductors
  • Solid State Electronics
  • Work Functions

Fields of Study

  • Materials science

Readers

  • Organic Chemistry
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics