INTEGRATED CIRCUITS FOR PORTABLE RADAR EQUIPMENT.
Abstract
Experimental results, and a theoretical description for vapor etching GaAs with HCl in H2 and H2 + AsH3 gas mixtures, are presented. Optical microscopy and surface profile studies of various surfaces have been performed to relate the initial substrate surface to the resulting germanium growth surface. These surface studies were made for selective and non-selective etch and deposition processes. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1966
- Accession Number
- AD0645047
Entities
People
- E. Clayton Teague
Organizations
- Texas Instruments