PROCEEDINGS OF THE CONFERENCE ON RELIABILITY OF SEMICONDUCTOR DEVICES AND INTEGRATED CIRCUITS, VOLUME I, 17, 18 AND 19 JUNE 1964, NEW YORK, N. Y.

Abstract

Contents: Internal reliability support effort at USAEL for the PEM program; Reliability improvement on VHF amplifier designs and processes; Step stress testing as a means of evaluating reliability of the PNP silicon alloy transistor; Improving the reliability of the PNP silicon alloy transistor; Reliability improvement of 2N336 and 2N2193 transistors; Preparation and effects of dislocations and resistivity of germanium single crystals; A universal test set for the measurement of thermal resistance; The use of infra-red techniques for transistor thermal resistance measurement; Improved reliability by means of material selection and production sampling; Application of ultrasonic energy to eutectic wafer bonding of transistors; Reliability improvements; Reliability verification of microcircuits through accelerated testing; Current microelectronic reliability testing in relation to silicon semiconductor networks; Reliability improvement process evaluation.

Document Details

Document Type
Technical Report
Publication Date
Jun 19, 1964
Accession Number
AD0645221

Entities

Organizations

  • Office of the Director

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Accelerated Testing
  • Amplifiers
  • Integrated Circuits
  • Materials
  • New York
  • Reliability
  • Resistance
  • Semiconductor Devices
  • Semiconductors
  • Silicon
  • Silicon Alloys
  • Single Crystals
  • Test And Evaluation
  • Test Sets
  • Thermal Resistance
  • Transistors

Fields of Study

  • Engineering

Readers

  • Semiconductor Device Technology
  • Software Engineering

Technology Areas

  • Microelectronics