INSTABILITIES IN PYROLYTICALLY DEPOSITED SILICON DIOXIDE FILMS AT ROOM TEMPERATURE.
Abstract
The report describes instabilities at room temperatures in metal-oxide semiconductor structures having SiO2 films deposited by decomposition of TEOS. These instabilities are manifested in a shift, along the voltage axis, of the capacitance voltage characteristics after the capacitor has been subjected to a voltage stress in the reverse direction. Typical shifts amounted to 13 volts (after application of 50 volts bias for thirty minutes) and could not be reversed even by prolonged application of a forward voltage. This effect, which is similar to that occurring at higher temperatures in MOS diodes having thermal oxide interfaces, is usually attributed to ion migration through the oxide. If a similar explanation holds true for the present observation, much higher ion mobilities at room temperatures must be assumed for TEOS oxides. However, the irreversibility of the effect also suggests that surface effects might be involved in the mechanism. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1966
- Accession Number
- AD0645507
Entities
People
- William Leighton
Organizations
- United States Army Communications-Electronics Command