A HIGH FREQUENCY SEMICONDUCTOR INSTABILITY DUE TO AMBIPOLAR DIFFUSION,

Abstract

A new high frequency semiconductor instability is proposed. The instability arises when a sufficiently strong d. c. electron field is applied to a semiconductor which has a high conductivity and contain both electrons and holes. The d. c. field must elevate the effective electron temperature to about three times the background lattice temperature. The instability is caused by the temperature dependence of the ambipolar diffusion coefficient. (Author)

Document Details

Document Type
Technical Report
Publication Date
Nov 08, 1966
Accession Number
AD0645746

Entities

People

  • K. Blotekjaer
  • P. Weissglas

Organizations

  • Royal Institute of Technology

Tags

DTIC Thesaurus Topics

  • Coefficients
  • Compound Semiconductors
  • Conductivity
  • Diffusion
  • Diffusion Coefficient
  • Electronics
  • Electrons
  • Frequency
  • Instability
  • Semiconductors
  • Solid State Electronics

Readers

  • Atmospheric Science / Meteorology, specifically Wind Wave Turbulence.
  • Semiconductor Device Technology
  • Thermal Physics or Thermal Science.

Technology Areas

  • Microelectronics