NONDESTRUCTIVE READOUT (NDRO) FROM THIN MAGNETIC FILMS.

Abstract

Five solid state phenomena were considered for possible use in nondestructive readout (NDRO) from thin magnetic film memories. The phenomenon of magnetoresistance in magnetic films was chosen as the most promising, and studies were made of this effect. Experimental studies of the switching characteristics of configurations involving magnetic films and other devices, such as tunnel diodes, were also made. Several experimental NDRO random access memories were built to demonstrate the feasibility of using magnetoresistance. The advantages of these memories were low drive currents and good s/n ratio. A new technique for an associative memory was conceived, and an experimental model was built to demonstrate feasibility. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jan 09, 1967
Accession Number
AD0647247

Entities

People

  • P. Oliveri
  • S. Greenberg

Organizations

  • Naval Air Warfare Center Warminster

Tags

DTIC Thesaurus Topics

  • Content Addressable Memory
  • Diodes
  • Films
  • Magnetic Film Memories
  • Magnetic Films
  • Magnetoresistance
  • Switching
  • Tunnel Diodes

Fields of Study

  • Physics

Readers

  • Artificial Intelligence
  • Computer Science/Computer Engineering/Data Science/Digital Signal Processing.
  • Superconducting Magnet Technology