TRANSVERSE MAGNETORESISTANCE IN N-TYPE GERMANIUM.

Abstract

The transverse magnetoresistance and Hall coefficient in high-resistivity n-type germanium were measured in pulsed magnetic fields up to 175 kgauss at temperatures between 20K and 70K. The magnetoresistance ratio was roughly proportional to HT to the minus 1.2 power for fields above 100 kgauss and temperatures below 40K for two orientations; H in the <111> direction. It was proportional to H to the 1.2 power T to the minus 1.5 power for H in the <001> direction. This behavior is not attributed to gradients in carrier concentration or to surface effects. The Hall coefficient increased with H at temperatures below 20K for H in the <001> direction. This is attributed to a decrease in the conduction-band electron density due to a change in the ionization energy. Calculations by D. F. Minner predict such a decrease for H in the <001> direction but no decrease for H in the <111> direction. (Author)

Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1967
Accession Number
AD0648446

Entities

People

  • Jean F. Gallagher
  • William F. Love

Organizations

  • University of Colorado Boulder

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Charged Particles
  • Coefficients
  • Conduction Bands
  • Electron Density
  • Electrons
  • Elementary Fermions
  • Elementary Particles
  • Energy Bands
  • Fermions
  • Germanium
  • Ionization
  • Leptons
  • Magnetic Fields
  • Magnetoresistance
  • Orientation (Direction)
  • Transverse

Readers

  • Mechanical Engineering/Mechanics of Materials.
  • Plasma Physics / Magnetohydrodynamics
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics