RADIATION EFFECTS IN THIN-FILM TRANSISTORS.
Abstract
The purpose of this program is to improve the radiation response of silicon-on-sapphire (SOS) thin film transistors by device variations selected on the basis of prior work and device analysis. The response will be related to a selection of design variations that will minimize the radiation response to ionizing and displacement producing radiation. The program consists of a statistically designed radiation experiment on a set of devices incorporating selected design variations, together with the development of the necessary design equations. During the First Quarter, the statistically designed experiment was developed based on a 2 to the 5th power factorial plan. A computer program was developed for data reduction according to principles of the analysis of variance. In addition, the basic design equation was developed from charge control theory. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1967
- Accession Number
- AD0648453
Entities
People
- C. C. Berggren
- G. D. Thomas
- V. R. Honnold
Organizations
- Hughes Aircraft Company