MOLECULAR CIRCUIT DEVELOPMENT,
Abstract
Materials research covered the following materials: silicon carbide, cadmium oxide, indium selenide, cadmium selenide, aluminum antimonide, silver telluride, boron, and mixtures of neodymium oxide with boron compounds. These materials were examined by various film-forming techniques. The physical properties of these materials, as well as their use in devices, were explored. Mechanisms of conduction in semiconductors, thin insulating films, and amorphous semiconductors were studied. Device work continued on field-effect devices. A new device, a boron varistor, was examined. It is believed that this varistor will prove to be generally useful in future thin-film electronics. Circuit exploration studies continued with the study of a field-effect rectifier, voltage-reference circuits, and possible varistor circuits. Radiation studies, as mentioned in the introduction, are being conducted on materials devices and circuits. Thus, it appears that devices and effects are becoming available that will ultimately allow thin-film circuits to be formed without resort to the use of any attached components, and that the objective of complete functional electronic circuits will be achieved. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 15, 1963
- Accession Number
- AD0648542
Entities
People
- Charles W. Moulton
Organizations
- Melpar