JUNCTION EFFECTS IN COMPOUND SEMICONDUCTORS.

Abstract

The effect of the considerable depth of donor impurity states near the indirect <100> conduction band minima on the direct-indirect transition in Ga(AsP) is discussed. A simple technique for using a Ga(AsP) laser to operate a CdSe or Cd(SeS) laser is described. Ultra-thin CdSe lasers of variable mode spacing, including the special case of single-mode operation, are described. Current oscillations in Au-compensated Si p-'i'-n diodes were studied. These oscillations are essentially independent of the external circuit (i.e., they are not negative resistance oscillations) and are not attributable to transit time effects. The various parameters affecting these oscillations were examined, and a space-charge instability model which is in accord with the experimental data is proposed. (Author)

Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1966
Accession Number
AD0648588

Entities

People

  • G. D. Clark
  • J. S. Moore
  • M. D. Sirkis
  • M. R. Johnson
  • N. Holonyak Jr.

Organizations

  • University of Illinois Urbana–Champaign

Tags

DTIC Thesaurus Topics

  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Conduction Bands
  • Electronics
  • Energy Bands
  • Experimental Data
  • Impurities
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Instability
  • Oscillation
  • Resistance
  • Semiconductors
  • Silicon Carbide
  • Space Charge

Fields of Study

  • Materials science

Readers

  • Control Systems Engineering.
  • Optical Physics and Photonics.
  • Solar Photovoltaics and Thermoelectric Devices.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Space