RADIATION EFFECTS ON THIN-FILM MICROELECTRONICS.

Abstract

The report describes the program to investigate the mechanisms of transient radiation effects on thin-film passive components. The effects under study included secondary emission effects, radiation-induced conductivity, memory and accumulated dose effects and damage by neutron irradiation. Radiation sources used were the 2 MeV and 600 keV flash X-ray machines, LINAC, and Fast Burst Reactor (FBR). A group of thin-film capacitors for studying the various effects was designed and fabricated. These capacitors were irradiated in air and in vacuum to determine the relative importance of the ambient environment on the total radiation-induced disturbance. Particular attention was paid to the effects of materials in the immediate proximity of the devices under study to determine methods of minimizing the effects of transient radiation.

Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1967
Accession Number
AD0648742

Entities

People

  • A. F. Krueger
  • V. H. Strahan

Tags

DTIC Thesaurus Topics

  • Capacitors
  • Emission
  • Films
  • Materials
  • Neutron Bombardment
  • Radiation
  • Radiation Effects
  • Secondary Emission
  • Thin Film Capacitors
  • Thin Films
  • X Rays

Fields of Study

  • Physics

Readers

  • Nuclear and Radiation Engineering.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Microelectromechanical Systems