DETAILED RADIATION EFFECTS STUDY ON FOUR JUNCTION-ISOLATED MICROCIRCUITS.
Abstract
Four circuits, including three differential amplifiers and one line driver, have been studied in pulsed ionizing radiation at rates ranging from 10 to the 7th power rads/sec to 3 x 10 to the 11th power rads/sec and in a neutron environment to fluences up to 2 x 10 to the 15th power n/sq cm. All of the circuits used junction isolation. The isolation junction photocurrent dominated the response in each case. One of the amplifiers experienced latchup at approximately 1 to 5 rads prompt dose when its isolation junction went into second breakdown. Neutron irradiation brought about fatal degradation at fluences of the order of 10 to the 15th power n/sq cm due to changes in the minority carrier liketime in the base region of the circuits' transistors. There is evidence of surface effects being present in the amplifiers; however, this mechanism of degradation is secondary to the bulk damage. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1967
- Accession Number
- AD0648820
Entities
People
- R. S. Caldwell
- W. C. Bowman
Organizations
- Boeing