THIN FILM TECHNIQUES FOR SILICON INTEGRATED CIRCUITS.
Abstract
The compatibility of certain thin film passive device processing and materials with silicon integrated circuits was verified. In particular, 4000-ohms-per-square resistive and 0.6-pF-per-sq mil capacitive elements have been fabricated on silicon wafers containing a 2N708 transistor. The properties of flash-evaporated cermet resistors were investigated as functions of the process parameters, powder drop rate, source temperature, and system pressure. Radio-frequency dielectric sputtering was briefly investigated and promises to be a major tool in the formation of high quality dielectric films. The electrical characteristics of thin film resistive and capacitive elements were measured at frequencies up to 10 GHz. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1967
- Accession Number
- AD0648991
Entities
People
- L. E. Terry
Organizations
- Motorola Mobility