INVESTIGATION OF THE BAND STRUCTURE OF GROUP V SEMI-METALS AND THE IV-VI SEMICONDUCTORS.

Abstract

Galvanomagnetic measurements were made in single crystals of n-type bismuth-antimony alloys as a function of concentration in the range 0 - 13 at % Sb. The data have been analyzed in terms of two band model. The ratio of the two resistivity components P sub 33/P sub 11 suggests that the electrons in the lower concentration alloys are located at the same points in the Brillouin zone as those for pure bismuth and that the ratio of the various mobility components is not much influenced on alloying bismuth with antimony. (Author)

Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1967
Accession Number
AD0649989

Entities

People

  • A. L. Jain

Organizations

  • State University of New York

Tags

DTIC Thesaurus Topics

  • Alloys
  • Antimony
  • Antimony Alloys
  • Band Structures
  • Brillouin Zones
  • Chemical Compounds
  • Compound Semiconductors
  • Crystals
  • Electronics
  • Electrons
  • Energy Bands
  • Measurement
  • Mobility
  • Physical Properties
  • Semiconductors
  • Single Crystals

Readers

  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Semiconductor Device Technology
  • Solar Photovoltaics and Thermoelectric Devices.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene