HIGH PERFORMANCE THIN FILMS FOR MICROCIRCUITS.
Abstract
The rate of hafnium films deposited with a new sputtering system has been studied in more detail. A hexagonally shaped substrate holder, which rotates to six different positions, allows performance of 5 sputtering runs without breaking the vacuum. Hafnium films can be deposited at a rate of 1200 A/min with a sputtering voltage of 2800 volts after the cathode has been cleaned in a pre-sputtering cleaning cycle lasting 60 minutes. The uniformity of the hafnium films over a 3x5 inch area is plus or minus 2% if a cathode of 6x6 inch size is utilized. A floating technique for hafnium-hafnium-dioxide capacitors has been developed and crystallographic examination of these films has been started. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1967
- Accession Number
- AD0650041
Entities
People
- Franz Huber
- Walter Witt
- William Laznovsky