EFFECTS OF RADIATION ON SEMICONDUCTOR MATERIALS AND DEVICES
Abstract
Results of investigations on the effects of nuclear radiation on semiconductor materials, device surfaces, and devices are discussed. Radiation damage in gallium phosphide was studied using electro- and cathodo-luminescence. Studies were also made of radiative and non-radiative recombination mechanisms in various compound and elemental semiconductors. A non-radiative Auger-type mechanism observed at neutral defect centers appears to explain non-radiative lifetime degradation from both chemical and radiation damage defects. The Fermi level dependence of the ESR spectrum associated with the phosphorus-vacancy complex was studied in electron-bombarded, phosphorus-doped LOPEX silicon. These studies confirm one assumption that the Si-G8 (E) center is not seen until the Fermi level falls below E sub C -0.48 eV. Experiments to determine the effects of device bias, temperature, and radiation dose rate on surface damage to MOS FET's showed qualitative agreement with a model of positive space charge buildup at traps in the devices' SiO2 layer.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 31, 1966
- Accession Number
- AD0650195
Entities
People
- D. K. Wilson
- J. D. Cuthbert
- J. P. Mitchell
- R. R. Blair