ELECTRIC FIELD EFFECT ON THE MAGNETORESISTANCE OF INDIUM ARSENIDE SURFACES IN HIGH MAGNETIC FIELDS.
Abstract
The Electric field effect on the electrical resistance of the surfaces of p-type indium arsenide was studied at 4.2 and 77K in magnetic fields ranging up to 110 koe. In the absence of a magnetic field such surfaces (prepared by crystallographic cleavage or by etching) were found to be n-type. Their field effect mobility was found to be independent of temperature. In high magnetic fields, the electrons introduced by the capacitively applied electric field increased only slightly the electrical conduction of the etched surfaces at both temperatures and that of the cleaved surfaces at 77K; but they caused nearly no change in the electrical conduction of the cleaved surfaces at 4.2K. It was concluded that in the surface conducting layer the electrons are degenerate and their kinetic energy of the motion perpendicular to the surface corresponds to the lowest quantized level in the narrow surface charge potential well. In high magnetic fields, at 4.2K, the results with the cleaved surfaces were attributed to a 'freeze out' of the carriers (whose momentum perpendicular to the surface is quantized in the surface potential well) due to the quantization of the momentum in the orbital parallel to the surface. The lack of complete 'freeze out' in the etched surfaces was attributed to the microscopic two-dimensional heterogeneities in the surface potential structure. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1967
- Accession Number
- AD0650287
Entities
People
- Harry C. Gates
- Shinji Kawaji
Organizations
- Massachusetts Institute of Technology