THEORETICAL AND EXPERIMENTAL STUDY OF THE ANOMALOUS HALL EFFECT,
Abstract
Measurements and calculations were made of the interaction between infrared radiation and free electrons in semiconductors with applied magnetic and electric fields. Effects caused by Lorentz field interaction with static magnetic fields have been demonstrated, but the analogous effect in electric fields was obscured by heating. Calculations of the radiation resistance of the antenna array formed by the magnetic field are reported. Calculations were also performed on propagation of light down a waveguide containing drifting carriers, but these have not been completed due to boundary condition difficulties. The use of approximations valid at low frequencies reveals the presence of a slow eddy-current mode, which will delay a signal in a dispersionless manner for a variable time. Infrared emission of recombination radiation from high-conductivity GaAs was investigated. The effects are ascribed to ionization in the high-field region of inhomogeneously formed Gunn domains. Measurements of absorption of 3.4-micrometers light by field-generated holes agree with the estimates of hole density derived from the current-voltage curves. Infrared power densities of 300 W/sq cm were observed, which approach those required for laser action. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1966
- Accession Number
- AD0650330
Entities
People
- H. J. Prager
- K. K. N. Chang
- P. D. Southgate
- S. G. Liu
Organizations
- RCA Corporation