ELECTRON COLLISION EFFECTS IN SEMICONDUCTORS,

Abstract

A survey is given of the basic theoretical principles governing electron collision effects in semiconductors. Some of the results presented are new, but they are integrated with older work where it seemed desirable. Topics covered include: Transition rates for band-band and band-trap Auger effects; threshold for band-band impact ionization; overlap integrals; recombination statistics and departures from the quasi-fermi level distribution. (Author)

Document Details

Document Type
Technical Report
Publication Date
May 01, 1966
Accession Number
AD0650717

Entities

People

  • Peter T. Landsberg

Organizations

  • Cardiff University

Tags

DTIC Thesaurus Topics

  • Collisions
  • Colorado
  • Compound Semiconductors
  • Electronics
  • Electrons
  • Fermi Levels
  • Integrals
  • Ionization
  • Semiconductors
  • Solid State Electronics
  • Statistics
  • Surveys
  • Transitions
  • Universities

Readers

  • Molecular Photonics/Laser Physics
  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics