THEORY OF OHMIC CONTACTS.

Abstract

Contact resistivity of a metal-semiconductor area contact is calculated for 10 to the 18th power - 10 to the 20th power/cu cm doping range, for n-type semiconductors and 0.7 - 1.0 eV barrier heights employing a thermionic-field emission model with neglect of barrier width fluctuation. Application to design of ohmic contact to group IV and III-V semiconductors is indicated. A criterion for an electrically good ohmic contact is proposed and the frequently encountered patchiness problem in practical alloy-contact work is discussed. (Author)

Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1967
Accession Number
AD0650738

Entities

People

  • Juri Vilms
  • Lothar Wandinger

Organizations

  • United States Army Communications-Electronics Command

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Electronics
  • Emission
  • Extrinsic Semiconductors
  • Field Emission
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Metal-Semiconductor Junctions
  • N Type Semiconductors
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Silicon Compounds

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Theoretical Analysis.

Technology Areas

  • Microelectronics