THIN FILM ELECTRONIC AMPLIFIERS,
Abstract
Thin film microelectronics will perform a wide variety of functions with the advent of a suitable thin film electronic amplifier. The emission amplifier proposed by Mead is not suitable because: Most of the emitted electrons experience collisions in the dielectric film between the emitting surface and the control element, thus losing energy and failing to reach the collector; and the collector current densities required to provide reasonable gain-bandwidth products will inevitably give rise to very large power densities to be thermally dissipated within the device. The thin film triode constructed by Weimer is promising because it has a favorable geometry. The interelectrode capacitances can be kept very small and the gain-bandwidth product is limited principally by the minimum separation between source and drain electrodes. Available technology for producing that gap would indicate the possibility of achieving gain bandwidth products in the range of 100,000,000 - 1,000,000,000 cycles/sec. Single crystal thin film semiconductor devices are attractive but the methods required for the formation of such crystals require very high temperatures which impose strict limitations on substrates and the sequence of circuit production. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 13, 1963
- Accession Number
- AD0650994
Entities
People
- David Abraham
Organizations
- Johns Hopkins University Applied Physics Laboratory