INVESTIGATION OF LASER RADIATION SIMULATION FOR MICROELECTRONIC DEVICE HARDENING.
Abstract
The report presents the results of a study to determine the feasibility of using a Q-switched neodynium glass laser to simulate transient radiation effects in silicon electronic devices. A laser system has been constructed utilizing a saturable dye as a passive Q-switching element operating in the 0.1 to 1 joule range with single pulsewidths of 20 to 30 nanoseconds. Equivalent silicon doses ranging up to 100,000 rads silicon can be obtained. An empirical and theoretical correlation has been made between carrier generation of the laser radiation and carrier generation due to flash x-rays in both a photoconductive specimen and a fast linear photo-diode. Further study was made of the effects of Q-switched laser on transistors and integrated circuits. The current pulses measured agree with calculated values. The results are similar to the results of flash x-ray studies made by others. The total absence of RF noise and spurious signals in the laser experiment allowed very precise observation of primary and secondary photocurrents throughout the exposed circuits. The Q-switched laser is a low cost, flexible tool for the study of transient radiation effects in silicon integrated circuits and is suitable for production line testing. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 27, 1967
- Accession Number
- AD0651412
Entities
People
- C. H. Skeen
- D. A. Mcwilliams
- G. L. Sandberg
- J. L. Buie
- R. G. Downing