CHARGE SENSITIVE PREAMPLIFIER USING FIELD-EFFECT TRANSISTORS.

Abstract

A general-purpose charge-sensitive Field-Effect Transistors (FET) preamplifier for use with high-resolution solid state radiation detectors is described. The germanium-equivalent noise linewidth of the preamplifier is less than 1.5 keV at room temperature when followed by an amplifier using single RC differentiation and integration time constants of 1 to 2 microseconds. The change in noise linewidth with input capacitance is approximately 0.07 keV/pf. When used with a 4 sq cm x 0.5 cm lithium-drifted germanium detector, an energy resolution of 2.2 keV has been obtained for gamma-rays of 100 keV or less. The entire preamplifier may be operated below room temperature for improved noise performance. (Author)

Document Details

Document Type
Technical Report
Publication Date
May 01, 1967
Accession Number
AD0651858

Entities

People

  • Larry V. East

Organizations

  • Air Force Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplifiers
  • Detectors
  • Electromagnetic Radiation
  • Electronic Amplifier
  • Field Effect Transistors
  • Gamma Rays
  • Germanium
  • High Resolution
  • Preamplifiers
  • Radiation
  • Transistors

Fields of Study

  • Physics

Readers

  • Electronics Engineering
  • Integrated Circuit Design and Technology.
  • Solar Physics