ELECTRON SHIELDING IN N-INSB.

Abstract

The effect on bound electrons in donor levels by conduction band electrons in n-InSb is investigated using a self-consistent calculation. Results of the calculations show that no bound state exists for impurity concentrations greater than 6 x 10 to the 13th power per cubic centimeter. This shielding appears to be the predominant effect leading to the lack of impurity binding energy. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1967
Accession Number
AD0653107

Entities

People

  • S. C. Miller
  • S. P. Li
  • W. F. Love

Organizations

  • University of Colorado Boulder

Tags

DTIC Thesaurus Topics

  • Band Structures
  • Conduction Bands
  • Electrons
  • Energy Bands
  • Impurities
  • Shielding

Fields of Study

  • Materials science
  • Physics

Readers

  • Materials Science and Engineering.
  • Nuclear and Radiation Engineering.

Technology Areas

  • Microelectronics