GALLIUM ARSENIDE SEMICONDUCTOR MATERIALS,
Abstract
The document is based on a translation of a foreign (non-Chinese) paper, the origin of which is not mentioned. Desirable features of gallium arsenide include high electron migration rate, high operating temperature, high operating voltage, and high radiation resistance. Gallium arsenide elements are capable of operating at +300 to -180C. Possession of a high radiation-resistant property enables the use of gallium arsenide elements in artificial satellites and space vehicles. Gallium arsenide reactance tubes have a cutoff frequency beyond 800 kmc, and gallium arsenide switch tubes have a switching speed lower than 10 to the -9th power sec. A gallium arsenide laser having a luminous efficiency of 60% and a high output power has been developed. The laser can be used for short-distance communications, microwave modulation, and electronic computer control. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 25, 1967
- Accession Number
- AD0653506
Entities
People
- Chen-sze Chao
Organizations
- National Air and Space Intelligence Center