TUNNEL DIODE,

Abstract

The mesa structure of the proposed germanium-base tunnel diode is mounted on a multilayer metal-germanium-glass structure. To decrease the capacitance and inductance and to improve the mechanical stability of the mesa structure, the diode contains an annular germanium plate with an ohmic ring contact on one side, and a metallic plate soldered on the other side through a glass ring gasket. The alloy forming the p-n junction makes contact with the metallic plate and is located inside the germanium ring.

Document Details

Document Type
Technical Report
Publication Date
Jan 23, 1967
Accession Number
AD0653527

Entities

People

  • L. A. Logunov

Organizations

  • National Air and Space Intelligence Center

Tags

DTIC Thesaurus Topics

  • Capacitance
  • Diodes
  • Electrical Impedance
  • Electrical Properties
  • Electricity
  • Electronic Equipment
  • Electronics
  • Germanium
  • Impedance
  • Inductance
  • P-N Junction Diodes
  • P-N Junctions
  • Semiconductor Devices
  • Tunnel Diodes

Readers

  • Electrical Engineering
  • Semiconductor Device Technology