INTEGRATED CIRCUITS FOR PORTABLE RADAR EQUIPMENT.
Abstract
The results of experiments on factors determining the surface structure and topography of the germanium growth front during selective etch and deposition in GaAs are summarized. Experimental data have been obtained which show that preferential growth near the pocket edges can be eliminated by partially refilling the etched regions. The surface topography of the selectively deposited germanium is determined primarily by the substrate temperature and the GeCl4 concentration. The device to be fabricated in the Ge pockets is described. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1967
- Accession Number
- AD0653628
Entities
People
- Charles F. Dennis
- E. Clayton Teague
- Louay Sharif
- Stacy B. Watelski
Organizations
- Texas Instruments