HETEROJUNCTION DEVICES.
Abstract
Heterojunctions were prepared by depositing Si epitaxially onto GaAs and GaP substrates using silicon-tellurium compounds as transporting agents. The experimental results are in agreement with the abrupt junction theory for heterojunctions. A quantitative discussion is given for electron tunneling through a Schottky Barrier. An open tube deposition system is described for use in the epitaxial deposition of III-V compounds. Associated water transport problems are discussed. Improvements have been made on a closed tube epitaxial system. A phenomelogical model of the transport and deposition has been formulated which predicts that the ampoule geometry has an appreciable influence on the deposition and may be used as a parameter in the design of an epitaxial system. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1967
- Accession Number
- AD0654001
Entities
People
- David Boyce
- Girtz Zeidenbergs
- Mark M. Davis
- Richard L. Anderson
- Thomas Huang
Organizations
- Syracuse University