JUNCTION EFFECTS IN COMPOUND SEMICONDUCTORS.

Abstract

The effect of donor impurity states near the indirect <100> conduction band minima on the direct-indirect transition in Ga(ASP) is discussed. Ultrathin platelet lasers of CdSe and Cd(SeS), including visible spectrum continuous (CW) operation, are described. Instabilities and self-oscillation phenomena in bulk samples of Si compensated with deep levels (Au, Co, etc.) are discussed. (Author)

Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1967
Accession Number
AD0654009

Entities

People

  • B. G. Streetman
  • G. E. Stillman
  • M. G. Crawford
  • M. M. Blouke
  • N. Holonyak Jr.

Organizations

  • University of Illinois Urbana–Champaign

Tags

DTIC Thesaurus Topics

  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Conduction Bands
  • Electronics
  • Energy Bands
  • Impurities
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Instability
  • Oscillation
  • Semiconductors
  • Silicon Carbide
  • Silicon Compounds
  • Spectra
  • Visible Spectra

Fields of Study

  • Materials science

Readers

  • Electronics Engineering
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics
  • Microelectronics - Graphene