ANALYSIS AND DESIGN OF MAXIMUM-GAIN, LOW-CURRENT JUNCTION FIELD EFFECT TRANSISTOR CONFIGURATIONS.
Abstract
Representative types of junction field effect transistor (JFET) configurations are analyzed on a qualitative comparative basis to determine the JFET configuration with the largest gain. Experimental results are presented on a small current amplifying device (SCAD) whose design is based on this determination. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1967
- Accession Number
- AD0654308
Entities
People
- B. Buchanan
- R. Dolan
- S. Roosild
Organizations
- Air Force Cambridge Research Laboratories