INVESTIGATION OF SOLID-STATE TRAVELING WAVE-AMPLIFIER.
Abstract
The report covers an investigation which was conducted to determine the feasibility of a solid-state traveling-wave amplifier. This device consists of an n-type semiconductor in which drifted carriers interact with a slow electromagnetic wave. Methods for characterizing the material are presented. The propagation matrix for the material is derived, including the effects of diffusion and particle-lattice collisions. The thin-film, slow-wave structure is studied. The dispersion equation of a stub-loaded meander line is derived, revealing usable frequencies at which the phase velocity is low and the interaction or coupling impedance is high. Results of fabrication of the slow-wave structure are outlined. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1967
- Accession Number
- AD0654342
Entities
People
- Joseph S. Nadan
Organizations
- United States Army Communications-Electronics Command